Solid-state image sensor, imaging device, and method of controlling solid-state image sensor

ABSTRACT

Provided is a solid-state image sensor which includes a photoelectric conversion element, a charge accumulation unit, a transfer transistor, a detection unit, and a connection transistor. The photoelectric conversion element generates a charge by photoelectric conversion. The charge accumulation unit accumulates the charge and generates a voltage according to an amount of the charge. The transfer transistor transfers the charge from the photoelectric conversion element to the charge accumulation unit. The detection unit detects whether or not a change amount of a photocurrent according to the amount of the charge exceeds a predetermined threshold. The connection transistor connects the charge accumulation unit and the detection unit to cause the photocurrent to flow.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a continuation application of U.S. patentapplication Ser. No. 18/178,091, filed Mar. 3, 2023, which is acontinuation application of U.S. patent application Ser. No. 17/309,344,filed on May 20, 2021, now U.S. Pat. No. 11,627,268, is a U.S. NationalPhase of International Patent Application No. PCT/JP2019/044097 filed onNov. 11, 2019, which claims priority benefit of Japanese PatentApplication No. JP 2018-223480 filed in the Japan Patent Office on Nov.29, 2018. Each of the above-referenced applications is herebyincorporated herein by reference in its entirety.

TECHNICAL FIELD

The present technology relates to a solid-state image sensor, an imagingdevice, and a method of controlling a solid-state image sensor. Morespecifically, the present technology relates to a solid-state imagesensor that detects whether or not a change amount of a light amount hasexceeded a threshold, an imaging device, and a method of controlling asolid-state image sensor.

BACKGROUND ART

Conventionally, a synchronous solid-state image sensor for capturingimage data (frame) in synchronization with a synchronous signal such asa vertical synchronous signal has been used in an imaging device or thelike. The typical synchronous solid-state image sensor can acquire theimage data only at each cycle (for example, 1/60 seconds) of thesynchronous signal, and is thus difficult to deal with a case wherehigher-speed processing is required in the fields of transportation,robots, and the like. Therefore, an asynchronous solid-state imagesensor provided with a circuit for detecting an address event has beenproposed (for example, see Non-Patent Document 1). Here, the addressevent means that a light amount of a pixel varies at a certain pixeladdress and the change amount has exceeded a threshold. The addressevent includes an on-event in which the light amount of the pixel hasvaried and the change amount has exceeded a predetermined upper limit,and an off-event in which the change amount has fallen below apredetermined lower limit. In the asynchronous solid-state image sensor,two-bit data including a detection result of a one-bit on-event and adetection result of a one-bit off-event is generated for each pixel.Such a solid-state image sensor for detecting an address event for eachpixel is called dynamic vision sensor (DVS).

CITATION LIST Non-Patent Document

-   Non-Patent Document 1: Patrick Lichtsteiner, et al., A 128 128 120    dB 15 μs Latency Asynchronous Temporal Contrast Vision Sensor, IEEE    JOURNAL OF SOLID-STATE CIRCUITS, VOL. 43, NO. 2, FEBRUARY 2008.

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

The above-described asynchronous solid-state image sensor (DVS)generates data at a much higher speed than the synchronous solid-stateimage sensor. However, in image recognition or the like, high-qualityimage data of three bits or more is sometimes required for each pixel,in addition to detection of the presence or absence of an address event,and the above-described DVS for generating two-bit data for each pixelcannot satisfy the request. To capture higher-quality image data, it isonly required to provide both the DVS and the synchronous solid-stateimage sensor. However, it is not desirable as it causes increase in thesize, the number of parts, and the cost. As described above, there is aproblem that it is difficult to further capture a high-quality image inthe solid-state image sensor (DVS) that detects an address event.

The present technology has been made in view of such a situation, and anobject is to further capture an image in a solid-state image sensor thatdetects an address event.

Solutions to Problems

The present technology has been made to solve the above-describedproblem and the first aspect is a solid-state image sensor and a methodof controlling the solid-state image sensor, the solid-state imagesensor including a photoelectric conversion element configured togenerate a charge by photoelectric conversion, a charge accumulationunit configured to accumulate the charge and generate a voltageaccording to an amount of the charge, a transfer transistor configuredto transfer the charge from the photoelectric conversion element to thecharge accumulation unit, a detection unit configured to detect whetheror not a change amount of a photocurrent according to the amount of thecharge exceeds a predetermined threshold, and a connection transistorconfigured to connect the charge accumulation unit and the detectionunit and allow the photocurrent to flow. This brings about an effectthat either detection of an address event or capture of image data isexecuted.

Furthermore, in the first aspect, the photoelectric conversion element,the charge accumulation unit, and the connection transistor can bearranged in each of a predetermined number of pixels, and thepredetermined number of pixels can share the detection unit. This bringsabout an effect that a circuit scale is reduced.

Furthermore, in the first aspect, the photoelectric conversion elementand the transfer transistor can be arranged in each of a predeterminednumber of pixels, and the predetermined number of pixels can share thecharge accumulation unit. This brings about an effect that a circuitscale is reduced.

Furthermore, in the first aspect, the connection transistor maytransition to a close state to connect the charge accumulation unit andthe detection unit in a case where a predetermined detection mode fordetecting whether or not the change amount exceeds the threshold is set,and connect the charge accumulation unit and the detection unit for afirst pulse period before the charge is transferred in a case where apredetermined imaging mode for capturing image data is set. This bringsabout an effect that the charge accumulation unit is initialized by theconnection transistor in the imaging mode.

Furthermore, in the first aspect, a reset transistor for initializingthe charge accumulation unit may be further included. This brings aboutan effect that the charge accumulation unit is initialized by the resettransistor in the imaging mode.

Furthermore, in the first aspect, the connection transistor maytransition to a close state to connect the charge accumulation unit andthe detection unit in a case where a predetermined detection mode fordetecting whether or not the change amount exceeds the threshold is set,and transition to an open state in a case where a predetermined imagingmode for capturing image data is set, and the reset transistor mayinitialize the charge accumulation unit over a predetermined resetperiod in the case where the imaging mode is set. This brings about aneffect that the charge accumulation unit is initialized by the resettransistor at predetermined timing in the imaging mode.

Furthermore, in the first aspect, a conversion efficiency controltransistor configured to control conversion efficiency for convertingthe charge into the voltage may be further included. This brings aboutan effect that the conversion efficiency is controlled.

Furthermore, in the first aspect, the connection transistor maytransition to a close state to connect the charge accumulation unit andthe detection unit in a case where a predetermined detection mode fordetecting whether or not the change amount exceeds the threshold is set,and connect the charge accumulation unit and the detection unit over apredetermined reset period in a case where a predetermined imaging modefor capturing image data is set, and the conversion efficiency controltransistor may control the conversion efficiency within a transferperiod in which the charge is transferred in the case where the imagingmode is set. This brings about an effect that the conversion efficiencyis controlled in the imaging mode.

Furthermore, in the first aspect, a reset transistor configured toinitialize the charge accumulation unit, and a conversion efficiencycontrol transistor configured to control conversion efficiency forconverting the charge into the voltage may be further included. Thisbrings about an effect that the charge accumulation unit is initializedby the reset transistor and the conversion efficiency is controlled.

Furthermore, in the first aspect, the connection transistor maytransition to a close state to connect the charge accumulation unit andthe detection unit in a case where a predetermined detection mode fordetecting whether or not the change amount exceeds the threshold is set,and transition to an open state in a case where a predetermined imagingmode for capturing image data is set, the reset transistor mayinitialize the charge accumulation unit within a predetermined resetperiod in the case where the imaging mode is set, and the conversionefficiency control transistor may control the conversion efficiencywithin a transfer period in which the charge is transferred in the casewhere the imaging mode is set. This brings about an effect that thecharge accumulation unit is initialized by the reset transistor atpredetermined timing in the imaging mode, and the conversion efficiencyis controlled.

Furthermore, in the first aspect, a readout circuit configured toamplify and output a difference between signals according to thevoltages of a pair of pixels may be further included, and thephotoelectric conversion element, the charge accumulation unit, and theconnection transistor may be arranged in each of the pair of pixels.This brings about an effect that a signal amplified with a high gain isread out.

Furthermore, in the first aspect, the transfer transistor may includefirst and second transfer transistors, the first transfer transistor maybe arranged in one of the pair of pixels and the second transfertransistor may be arranged in the other of the pair of pixels, and oneof the first and second transfer transistors may transfer the charge andthe other transfer transistor may be in an off state during transfer bythe one transfer transistor. This brings about an effect that adifferentially amplified signal is read out by the control of thetransfer transistor.

Furthermore, in the first aspect, the readout circuit may include apredetermined number of unit readout circuits, and each of the unitreadout circuits may include a current source, a current mirror circuit,a first switch that connects the current sources of the predeterminednumber of unit readout circuits, and a second switch that connects thecurrent mirror circuits of the predetermined number of unit readoutcircuits. This brings about an effect that noise is suppressed.

Furthermore, in the first aspect, an analog-digital converter configuredto convert an analog signal according to the voltage into a digitalsignal may be further included, and the photoelectric conversionelement, the charge accumulation unit, the transfer transistor, thedetection unit, the connection transistor, and the analog-digitalconverter may be arranged in each of a plurality of pixels. This bringsabout an effect that a readout speed is improved.

Furthermore, the second aspect of the present technology is an imagingdevice including a photoelectric conversion element configured togenerate a charge by photoelectric conversion, a charge accumulationunit configured to accumulate the charge and generate a voltageaccording to an amount of the charge, a transfer transistor configuredto transfer the charge from the photoelectric conversion element to thecharge accumulation unit, a detection unit configured to detect whetheror not a change amount of a photocurrent according to the amount of thecharge exceeds a predetermined threshold, a connection transistorconfigured to connect the charge accumulation unit and the detectionunit and allow the photocurrent to flow, and a digital signal processingunit configured to process a digital signal obtained by performinganalog-digital conversion for an analog signal according to the voltage.This brings about an effect that either detection of an address event orreadout and capture of image data is executed.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a block diagram illustrating a configuration example of animaging device according to a first embodiment of the presenttechnology.

FIG. 2 is a diagram illustrating an example of a stacked structure of asolid-state image sensor according to the first embodiment of thepresent technology.

FIG. 3 is a block diagram illustrating a configuration example of thesolid-state image sensor according to the first embodiment of thepresent technology.

FIG. 4 is a block diagram illustrating a configuration example of apixel according to the first embodiment of the present technology.

FIG. 5 is a circuit diagram illustrating a configuration example of acurrent-voltage conversion unit, a buffer, a differentiator circuit, anda comparator according to the first embodiment of the presenttechnology.

FIG. 6 is a block diagram illustrating a configuration example of acolumn signal processing unit according to the first embodiment of thepresent technology.

FIG. 7 is a timing chart illustrating an example of an operation of thesolid-state image sensor in a detection mode according to the firstembodiment of the present technology.

FIG. 8 is a timing chart illustrating an example of an operation of thesolid-state image sensor in an imaging mode according to the firstembodiment of the present technology.

FIG. 9 is a timing chart illustrating an example of an operation of thesolid-state image sensor in the imaging mode in a case of not performingcorrelated double sampling (CDS) processing according to the firstembodiment of the present technology.

FIG. 10 is a flowchart illustrating an example of imaging processingaccording to the first embodiment of the present technology.

FIG. 11 is a flowchart illustrating an example of detection processingaccording to the first embodiment of the present technology.

FIG. 12 is a plan view illustrating a configuration example of a pixelarray unit according to a second embodiment of the present technology.

FIG. 13 is a block diagram illustrating a configuration example of adetection circuit shared block according to the second embodiment of thepresent technology.

FIG. 14 is a plan view illustrating a configuration example of a pixelarray unit according to a third embodiment of the present technology.

FIG. 15 is a block diagram illustrating a configuration example of an FDshared block according to the third embodiment of the presenttechnology.

FIG. 16 is a block diagram illustrating a configuration example of apixel according to a fourth embodiment of the present technology.

FIG. 17 is a timing chart illustrating an example of an operation of asolid-state image sensor in a detection mode according to the fourthembodiment of the present technology.

FIG. 18 is a timing chart illustrating an example of an operation of thesolid-state image sensor in an imaging mode according to the fourthembodiment of the present technology.

FIG. 19 is a block diagram illustrating a configuration example of apixel according to a fifth embodiment of the present technology.

FIG. 20 is a timing chart illustrating an example of an operation of asolid-state image sensor in a detection mode according to the fifthembodiment of the present technology.

FIG. 21 is a timing chart illustrating an example of an operation of thesolid-state image sensor in a high-efficiency imaging mode according tothe fifth embodiment of the present technology.

FIG. 22 is a timing chart illustrating an example of an operation of thesolid-state image sensor in a low-efficiency imaging mode according tothe fifth embodiment of the present technology.

FIG. 23 is a timing chart illustrating an example of an operation of thesolid-state image sensor in the high-efficiency imaging mode in a caseof not performing CDS processing according to the fifth embodiment ofthe present technology.

FIG. 24 is a timing chart illustrating an example of an operation of thesolid-state image sensor in the low-efficiency imaging mode in the caseof not performing CDS processing according to the fifth embodiment ofthe present technology.

FIG. 25 is a block diagram illustrating a configuration example of apixel according to a sixth embodiment of the present technology.

FIG. 26 is a timing chart illustrating an example of an operation of asolid-state image sensor in a detection mode according to the sixthembodiment of the present technology.

FIG. 27 is a timing chart illustrating an example of an operation of thesolid-state image sensor in a high-efficiency imaging mode according tothe sixth embodiment of the present technology.

FIG. 28 is a timing chart illustrating an example of an operation of thesolid-state image sensor in a low-efficiency imaging mode according tothe sixth embodiment of the present technology.

FIG. 29 is a block diagram illustrating a configuration example of asolid-state image sensor according to a seventh embodiment of thepresent technology.

FIG. 30 is a block diagram illustrating a configuration example of acolumn readout circuit according to the seventh embodiment of thepresent technology.

FIG. 31 is a circuit diagram illustrating a configuration example of aunit readout circuit according to the seventh embodiment of the presenttechnology.

FIG. 32 is a timing chart illustrating an example of an operation of thesolid-state image sensor in a detection mode according to the seventhembodiment of the present technology.

FIG. 33 is a circuit diagram illustrating a configuration example of aunit readout circuit according to an eighth embodiment of the presenttechnology.

FIG. 34 is a block diagram illustrating a configuration example of asolid-state image sensor according to a ninth embodiment of the presenttechnology.

FIG. 35 is a plan view illustrating a configuration example of a pixelarray unit according to the ninth embodiment of the present technology.

FIG. 36 is a block diagram illustrating a configuration example of apixel according to the ninth embodiment of the present technology.

FIG. 37 is a block diagram illustrating a schematic configuration of avehicle control system.

FIG. 38 is an explanatory diagram illustrating an example ofinstallation positions of imaging units.

MODE FOR CARRYING OUT THE INVENTION

Hereinafter, modes for implementing the present technology (hereinafterreferred to as embodiments) will be described. Description will be givenaccording to the following order.

-   -   1. First Embodiment (an example of connecting a floating        diffusion layer and an address event detection unit)    -   2. Second Embodiment (an example of connecting a floating        diffusion layer and a shared address event detection unit)    -   3. Third Embodiment (an example of connecting a shared floating        diffusion layer and an address event detection unit)    -   4. Fourth Embodiment (an example of adding a reset transistor        and connecting a floating diffusion layer and an address event        detection unit)    -   5. Fifth Embodiment (an example of adding a conversion        efficiency control transistor and connecting a floating        diffusion layer and an address event detection unit)    -   6. Sixth Embodiment (an example of adding a reset transistor and        a conversion efficiency control transistor and connecting a        floating diffusion layer and an address event detection unit)    -   7. Seventh Embodiment (an example of adding a circuit for        differential readout and connecting a floating diffusion layer        and an address event detection unit)    -   8. Eighth Embodiment (an example of horizontally connecting        circuits for differential readout and connecting a floating        diffusion layer and an address event detection unit)    -   9. Ninth Embodiment (an example of arranging an analog-digital        converter for each pixel and connecting a floating diffusion        layer and an address event detection unit)    -   10. Applications to Moving Bodies

1. First Embodiment

[Configuration Example of Imaging Device]

FIG. 1 is a block diagram illustrating a configuration example of animaging device 100 according to a first embodiment of the presenttechnology. The imaging device 100 includes an imaging lens 110, asolid-state image sensor 200, a recording unit 120, and a control unit130. As the imaging device 100, a camera mounted on an industrial robot,an in-vehicle camera, or the like is assumed.

The imaging lens 110 condenses incident light and guides the incidentlight to the solid-state image sensor 200. The solid-state image sensor200 captures image data and detects presence or absence of an addressevent. Here, the address event includes an on-event and an off-event,and a detection result of the address event includes a one-bit on-eventdetection result and a one-bit off-event detection result. The on-eventmeans that a change amount of an incident light amount has exceeded apredetermined upper limit threshold. Meanwhile, the off-event means thatthe change amount of the light amount has fallen below a predeterminedlower limit threshold. The solid-state image sensor 200 processes thedetection result of the address event and outputs data indicating aprocessing result and the image data to the recording unit 120 via asignal line 209. Note that the solid-state image sensor 200 may detectonly one of the on-event and the off-event.

The recording unit 120 records the data from the solid-state imagesensor 200. The control unit 130 controls the solid-state image sensor200 to capture image data and detect the presence or absence of anaddress event.

[Configuration Example of Solid-State Image Sensor]

FIG. 2 is a diagram illustrating an example of a stacked structure ofthe solid-state image sensor 200 according to the first embodiment ofthe present technology. The solid-state image sensor 200 includes acircuit chip 202 and a light-receiving chip 201 stacked on the circuitchip 202. These chips are electrically connected via a connection partsuch as a via. Note that Cu—Cu bonding or bump can be used forconnection in addition to the via.

FIG. 3 is a block diagram illustrating a configuration example of thesolid-state image sensor 200 according to the first embodiment of thepresent technology. The solid-state image sensor 200 includes a drivecircuit 211, a detection signal processing unit 212, an arbiter 213, apixel array unit 214, and a column signal processing unit 250.

Here, the solid-state image sensor 200 is set to any one of a pluralityof modes including a detection mode and an imaging mode. The detectionmode is a mode for detecting the presence or absence of an address eventwithout capturing image data. Meanwhile, the imaging mode is a mode forcapturing image data without detecting an address event.

In the pixel array unit 214, a plurality of pixels 300 is arrayed in atwo-dimensional lattice manner. Hereinafter, a set of the pixels 300arrayed in a horizontal direction is referred to as a “row”, and a setof the pixels 300 arrayed in a direction perpendicular to the row isreferred to as a “column”.

The pixel 300 detects the presence or absence of an address event andgenerates an analog pixel signal. When detecting the presence or absenceof an address event, the pixel 300 supplies a detection signalindicating a detection result to the detection signal processing unit212. Meanwhile, when generating the pixel signal, the pixel 300 outputsthe pixel signal to the column signal processing unit 250.

The drive circuit 211 drives the pixel 300 to output either thedetection signal or the pixel signal. The drive circuit 211 causes eachof the pixels 300 to detect the presence or absence of an address eventin a case where the detection mode is set. Meanwhile, in a case wherethe imaging mode is set, the drive circuit 211 selects and exposes rowsin order to generate the pixel signal.

The arbiter 213 arbitrates requests from the pixel array unit 214, andtransmits a response to the pixel array unit 214 on the basis of anarbitration result.

The detection signal processing unit 212 executes predetermined signalprocessing such as image recognition processing for the detection signalfrom the pixel array unit 214. The detection signal processing unit 212supplies data indicating a processing result to the recording unit 120via the signal line 209.

The column signal processing unit 250 performs analog to digital (AD)conversion processing of converting the pixel signal from the pixelarray unit 214 into a digital signal. The column signal processing unit250 performs various types of signal processing such as CDS processingand dark current correction as necessary in addition to the ADconversion processing, and supplies image data including the processeddigital signal to the recording unit 120.

[Configuration Example of Pixel]

FIG. 4 is a block diagram illustrating a configuration example of thepixel 300 according to the first embodiment of the present technology.The pixel 300 includes a pixel circuit 310 and an address eventdetection unit 400.

The pixel circuit 310 generates the pixel signal and includes aphotoelectric conversion element 311, a transfer transistor 312, aconnection transistor 313, a floating diffusion layer 314, anamplification transistor 315, and a selection transistor 316. As thetransistors in the pixel circuit 310, for example, an N-typemetal-oxide-semiconductor (MOS) transistor is used.

The photoelectric conversion element 311 generates a charge byphotoelectric conversion for incident light. The transfer transistor 312transfers the charge from the photoelectric conversion element 311 tothe floating diffusion layer 314 according to a transfer signal TRG fromthe drive circuit 211.

The connection transistor 313 connects the address event detection unit400 and the floating diffusion layer 314 according to a control signalRST_DVM from the drive circuit 211, and allows a photocurrent to flow.

The floating diffusion layer 314 accumulates the transferred charge andgenerates a voltage according to the amount of accumulated charge. Notethat the floating diffusion layer 314 is an example of a chargeaccumulation unit described in claims.

The amplification transistor 315 amplifies the voltage of the floatingdiffusion layer 314 and supplies the amplified voltage as a pixel signalto the selection transistor 316. The selection transistor 316 supplies apixel signal Vin to the column signal processing unit 250 via a verticalsignal line VSL according to a selection signal SEL from the drivecircuit 211. The vertical signal line VSL is wired for each column alongthe column direction in the pixel array unit 214.

The address event detection unit 400 detects whether or not a changeamount of a photocurrent according to a light amount exceeds apredetermined threshold (in other words, the presence or absence of anaddress event). The address event detection unit 400 includes acurrent-voltage conversion unit 410, a buffer 420, a differentiatorcircuit 430, and a comparator 440. Note that the address event detectionunit 400 is an example of a detection unit described in the claims.

The current-voltage conversion unit 410 converts the photocurrent into apixel voltage Vp. For example, the photocurrent is logarithmicallyconverted. The current-voltage conversion unit 410 supplies the pixelvoltage Vp to the buffer 420.

The buffer 420 outputs the pixel voltage Vp from the current-voltageconversion unit 410 to the differentiator circuit 430. The buffer 420can improve a drive force for driving a rear stage. Furthermore, thebuffer 420 can secure isolation of noise associated with a rear-stageswitching operation.

The differentiator circuit 430 obtains the change amount of the pixelvoltage Vp by differential operation. The change amount of the pixelvoltage Vp indicates the change amount of the light amount. Thedifferentiator circuit 430 supplies a differential signal Voutindicating the change amount of the light amount to the comparator 440.

The comparator 440 compares the differential signal Vout with thepredetermined threshold (upper limit threshold or lower limitthreshold). A comparison result COMP of the comparator 440 indicates thedetection result of the address event. The comparator 440 supplies thecomparison result COMP to the transfer unit 450.

The transfer unit 450 transfers a detection signal DET and supplies anauto-zero signal XAZ to the differentiator circuit 430 forinitialization after the transfer. The transfer unit 450 supplies arequest for requesting transfer of the detection signal DET to thearbiter 213 when the address event is detected. Then, when receiving aresponse to the request, the transfer unit 450 supplies the comparisonresult COMP as the detection signal DET to the detection signalprocessing unit 212 and supplies the auto-zero signal XAZ to thedifferentiator circuit 430.

By providing the address event detection unit 400 and the pixel circuit310 for each pixel, the solid-state image sensor 200 can capture imagedata including a pixel value according to the light amount whileimplementing the DVS function. It is conceivable to separately mount aDVS provided with only the address event detection unit 400 for eachpixel and a solid-state image sensor provided with only the pixelcircuit 310 for each pixel, but this configuration is not favorable.This is because the circuit scale and cost increase, and data obtainedby the DVS and data obtained by the solid-state image sensor have a gapdue to a difference in mounting positions of two solid-state imagesensors.

[Configuration Example of Address Detection Unit]

FIG. 5 is a circuit diagram illustrating a configuration example of thecurrent-voltage conversion unit 410, the buffer 420, the differentiatorcircuit 430, and the comparator 440 according to the first embodiment ofthe present technology.

The current-voltage conversion unit 410 includes N-type transistors 412and 415, a capacitance 413, and a P-type transistor 414.Metal-oxide-semiconductor (MOS) transistors are used as the N-typetransistor 412, the P-type transistor 414, and the N-type transistor415, for example.

A source of the N-type transistor 412 is connected to the pixel circuit310 and a drain of the N-type transistor 412 is connected to a powersupply terminal. The P-type transistor 414 and the N-type transistor 415are connected in series between the power supply terminal and areference terminal having a predetermined reference potential (groundpotential or the like). Furthermore, a connection point between theP-type transistor 414 and the N-type transistor 415 is connected to agate of the N-type transistor 412 and an input terminal of the buffer420. A connection point between the N-type transistor 412 and the pixelcircuit 310 is connected to a gate of the N-type transistor 415.

Furthermore, a predetermined bias voltage V_(blog) is applied to a gateof the P-type transistor 414. The capacitance 413 is inserted betweenthe gate of the N-type transistor 412 and the gate of the N-typetransistor 415.

Furthermore, for example, the pixel circuit 310 is arranged on thelight-receiving chip 201, and a rear-stage circuit is arranged on thecircuit chip 202. Note that the circuits and elements arranged on thelight-receiving chip 201 and the circuit chip 202 are not limited tothis configuration.

The buffer 420 includes P-type transistors 421 and 422. For example, aMOS transistor is used as the transistors.

In the buffer 420, the P-type transistors 421 and 422 are connected inseries between the power supply terminal and the reference potentialterminal. Furthermore, a gate of the P-type transistor 422 is connectedto the current-voltage conversion unit 410, and a connection point ofthe P-type transistors 421 and 422 is connected to the differentiatorcircuit 430. A predetermined bias voltage V_(bsf) is applied to a gateof the P-type transistor 421.

The differentiator circuit 430 includes capacitances 431 and 434, P-typetransistors 432 and 433, and an N-type transistor 435. For example, aMOS transistor is used as transistors in the differentiator circuit 430,for example.

The P-type transistor 433 and the N-type transistor 435 are connected inseries between the power supply terminal and the reference potentialterminal. A predetermined bias voltage V_(bdiff) is input to a gate ofthe N-type transistor 435. These transistors function as an invertingcircuit having the gate of the P-type transistor 433 as an inputterminal 491 and the connection point of the P-type transistor 433 andthe N-type transistor 435 as an output terminal 492.

The capacitance 431 is inserted between the buffer 420 and the inputterminal 491. The capacitance 431 supplies a current according to timederivative of (in other words, the change amount in) the pixel voltageVp from the buffer 420 to the input terminal 491. Furthermore, thecapacitance 434 is inserted between the input terminal 491 and theoutput terminal 492.

The P-type transistor 432 opens or closes a path between the inputterminal 491 and the output terminal 492 according to the auto-zerosignal XAZ from the transfer unit 450. For example, when the low-levelauto-zero signal XAZ is input, the P-type transistor 432 transitions tothe on state according to the auto-zero signal XAZ and sets thedifferential signal Vout to the initial value.

The comparator 440 includes P-type transistors 441 and 443 and N-typetransistors 442 and 444. For example, a MOS transistor is used as thetransistors.

In the comparator 440, the P-type transistor 441 and the N-typetransistor 442 are connected in series between the power supply terminaland the reference terminal, and the P-type transistor 443 and the N-typetransistor 444 are also connected in series between the power supplyterminal and the reference terminal. Furthermore, gates of the P-typetransistors 441 and 443 are connected to the differentiator circuit 430.An upper limit voltage V_(high) indicating an upper limit threshold isapplied to a gate of the N-type transistor 442, and a lower limitvoltage V_(low) indicating a lower limit threshold is applied to a gateof the N-type transistor 444.

A connection point of the P-type transistor 441 and the N-typetransistor 442 is connected to the transfer unit 450, and a voltage atthis connection point is output as a comparison result COMP+ withrespect to the upper limit threshold. A connection point of the P-typetransistor 443 and the N-type transistor 444 is connected to thetransfer unit 450, and a voltage at this connection point is output as acomparison result COMP− with respect to the lower limit threshold. Withsuch a connection, the comparator 440 outputs the high-level comparisonresult COMP+ in a case where the differential signal Vout is higher thanthe upper limit voltage V_(high), and outputs the low-level comparisonresult COMP− in a case where the differential signal Vout is lower thanthe lower limit voltage V_(low). The comparison result COMP is a signalincluding these comparison results COMP+ and COMP−.

Note that the comparator 440 compares both the upper limit threshold andthe lower limit threshold with the differential signal Vout. However,the comparator 440 may compare only one of the upper limit threshold andthe lower limit threshold with the differential signal Vout. In thiscase, unnecessary transistors can be eliminated. For example, whencomparing the differential signal Vout only with the upper limitthreshold, only the P-type transistor 441 and the N-type transistor 442are arranged. Furthermore, the capacitance 434 is arranged in thedifferentiator circuit 430, but the capacitance 434 can be reduced.

[Configuration Example of Column Signal Processing Unit]

FIG. 6 is a block diagram illustrating a configuration example of thecolumn signal processing unit 250 according to the first embodiment ofthe present technology. The column signal processing unit 250 includes aplurality of AD converters 251, a plurality of memories 252, an outputunit 253, a digital calculation unit 254, and an interface unit 255. TheAD converter 251 and the memory 252 are arranged for each column. Y ADconverters 251 and Y memories 252 are arranged where the number ofcolumns is Y (Y is an integer).

The AD converter 251 performs AD conversion processing and CDSprocessing for the analog pixel signal Vin of a corresponding column.The AD converter 251 causes the corresponding memory 252 to store aprocessed digital signal Dout. Note that the AD converter 251 mayperform only the AD conversion processing and a subsequent circuit mayperform the CDS processing.

The memory 252 stores the digital signal Dout. The output unit 253 readsout the digital signal Dout stored in the memory 252 in order andoutputs the digital signal Dout to the digital calculation unit 254.

The digital calculation unit 254 performs predetermined signalprocessing such as dark current correction processing and demosaicprocessing for the digital signal Dout. The digital calculation unit 254supplies image data including the processed pixel signal to theinterface unit 255.

The interface unit 255 outputs the image data from the digitalcalculation unit 254 to the recording unit 120.

[Operation Example of Solid-State Image Sensor]

FIG. 7 is a timing chart illustrating an example of an operation of thesolid-state image sensor 200 in the detection mode according to thefirst embodiment of the present technology. For example, when thedetection mode is set at timing TO, the drive circuit 211 sets thecontrol signal RST_DVM and the transfer signal TRG to the high level.Meanwhile, in the detection mode, the selection signal SEL is controlledto, for example, the low level.

Both the connection transistor 313 and the transfer transistor 312transition to the close state by the high-level control signal RST_DVMand transfer signal TRG. As a result, the address event detection unit400 and the floating diffusion layer 314 are connected, and thephotocurrent flows through the connection transistor 313 and thetransfer transistor 312. Then, the address event detection unit 400compares the change amount of the photocurrent with a threshold todetect the presence or absence of an address event.

FIG. 8 is a timing chart illustrating an example of an operation of thesolid-state image sensor 200 in the imaging mode according to the firstembodiment of the present technology.

The control unit 130 supplies a vertical synchronous signal VSYNC. Thevertical synchronous signal VSYNC rises at, for example, timing T1 andnext rises at timing T7.

The drive circuit 211 performs rolling shutter control for selecting andexposing rows in order. For example, the drive circuit 211 startsexposure of the first row at timing T2 and starts exposure of the secondrow at timing T3.

Furthermore, the drive circuit 211 causes the column signal processingunit 250 to perform AD conversion (in other words, readout) of the pixelsignal at termination of the exposure. For example, the drive circuit211 causes the column signal processing unit 250 to read out the firstrow at timing T4 to T5 at the termination of the exposure of the firstrow, and to read out the second row at timing T5 to T6 at thetermination of the exposure of the second row.

In a readout period such as the timing T4 to T5, the drive circuit 211supplies the high-level control signal RST_DVM over the reset periodfrom the predetermined timing T11 to T12 to initialize the floatingdiffusion layer 314. Thereby, a reset level obtained by amplifying apotential Vfd of the floating diffusion layer 314 at the initializationis generated. Then, the drive circuit 211 sets the selection signal SELto the high level in a conversion period from the timing T13 to T14. Inthis period, the column signal processing unit 250 performs ADconversion for the reset level.

Next, the drive circuit 211 supplies the high-level transfer signal TRGover a transfer period from timing T15 to T16 to transfer the charge tothe floating diffusion layer 314. Thereby, a signal level obtained byamplifying the potential Vfd of the floating diffusion layer 314according to an exposure amount is generated. Then, the drive circuit211 sets the selection signal SEL to the high level in the conversionperiod from the timing T17 to T18. In this period, the column signalprocessing unit 250 performs AD conversion for the signal level andperforms the CDS processing.

Note that the column signal processing unit 250 performs the CDSprocessing but can be configured no to perform the CDS processing. Inthis case, as illustrated in FIG. 9 , the selection signal SEL is set tothe low level and the reset level is not converted until timing T14.

FIG. 10 is a flowchart illustrating an example of the imaging processingaccording to the first embodiment of the present technology. The imagingprocessing is started when, for example, a predetermined application forcapturing image data is executed.

The drive circuit 211 in the solid-state image sensor 200 determineswhether or not it is falling timing of a vertical synchronous signalVSYNC (step S901). In a case where it is the falling timing of VSYNC(step S901: Yes), the drive circuit 211 selects one of the rows (stepS902). The drive circuit 211 initializes the floating diffusion layer314 (FD: floating diffusion) of the selected row by the control signalRST_DVM (step S903). The column signal processing unit 250 performs ADconversion for the reset level (step S904).

Then, the drive circuit 211 supplies the transfer signal TRG to theselected row to transfer the charge to the floating diffusion layer 314(FD) (step S905). The column signal processing unit 250 performs ADconversion for the signal level (step S906).

The drive circuit 211 determines whether or not the AD conversion (thatis, readout) of all the rows has been completed (step S907). In a casewhere the readout of all the rows has not been completed (step S907:No), the drive circuit 211 repeats the processing of step S902 and thesubsequent steps.

On the other hand, in a case where the readout of all the rows has beencompleted (step S907: Yes), the solid-state image sensor 200 repeatedlyexecutes the processing of step S901 and the subsequent steps.

FIG. 11 is a flowchart illustrating an example of detection processingaccording to the first embodiment of the present technology. Thisoperation is started when, for example, a predetermined application fordetecting an address event is executed.

The drive circuit 211 supplies the high-level transfer signal TRG andcontrol signal RST_DVM to all the pixels to connect the floatingdiffusion layer 314 and the address event detection unit 400 (stepS911). Then, the drive circuit 211 initializes the differentiatorcircuit 430 (step S912).

The current-voltage conversion unit 410 converts the photocurrent intothe pixel voltage Vp (step S913). The differentiator circuit 430 outputsthe differential signal Vout according to the change amount of the pixelvoltage Vp (step S914).

The comparator 440 determines whether or not the differential signalVout (change amount) exceeds the upper limit threshold (step S915). In acase where the change amount exceeds the upper limit threshold (stepS915: Yes), the address event detection unit 400 detects an on-event(step S916).

In a case where the change amount is equal to or less than the upperlimit threshold (step S915: No), the comparator 440 determines whetheror not the change amount falls below the lower limit threshold (stepS918). In a case where the change amount falls below the lower limitthreshold (step S918: Yes), the address event detection unit 400 detectsan off-event (step S919).

In a case where the change amount is equal to or larger than the lowerlimit threshold (step S918: No), the address event detection unit 400repeats step S913 and the subsequent steps. Furthermore, after stepsS916 and S917, the transfer unit 450 transfers the detection result(step S920). After step S920, the solid-state image sensor 200repeatedly executes step S912 and the subsequent steps. The second andsubsequent initializations of the differentiator circuit 430 areexecuted by the transfer unit 450.

As described above, according to the first embodiment of the presenttechnology, the address event detection unit 400 and the floatingdiffusion layer 314 in the pixel circuit 310 are connected by theconnection transistor 313. Therefore, detection of the presence orabsence of an address event and output of the analog pixel signal can beperformed. Thereby, capture of image data can be performed in additionto the detection of the presence or absence of an address event.

2. Second Embodiment

In the above-described first embodiment, the address event detectionunit 400 has been arranged for each pixel. However, the circuit scale ofthe pixel array unit 214 increases as the number of pixels increases. Asolid-state image sensor 200 according to a second embodiment isdifferent from that of the first embodiment in that a plurality ofpixels shares one address event detection unit 400.

FIG. 12 is a plan view illustrating a configuration example of a pixelarray unit 214 according to the second embodiment of the presenttechnology. In the pixel array unit 214 of the second embodiment, aplurality of detection circuit shared blocks 301 is arrayed in atwo-dimensional lattice manner. In each of the detection circuit sharedblocks 301, a plurality of pixels 300 sharing one address eventdetection unit 400 is arrayed.

FIG. 13 is a block diagram illustrating a configuration example of thedetection circuit shared block 301 according to the second embodiment ofthe present technology. The detection circuit shared block 301 isprovided with one address event detection unit 400 and a plurality ofpixel circuits 310. The number of pixel circuits 310 is the same as thenumber of pixels in the detection circuit shared block 301.

Drains of connection transistors 313 of the pixel circuits 310 arecommonly connected to the address event detection unit 400. Furthermore,in FIG. 13 , a set of the pixel circuit 310 and the address eventdetection unit 400 constitutes one pixel 300. With the above connectionconfiguration, the plurality of pixels 300 in the detection circuitshared block 301 shares one address event detection unit 400.

A drive circuit 211 selects one of the plurality of pixels 300 in thedetection circuit shared block 301 in a detection mode, and supplies acontrol signal RST_DVM to the pixel 300. The pixel 300 to be selected isswitched at regular intervals, for example.

As described above, according to the second embodiment of the presenttechnology, since a plurality of pixels shares one address eventdetection unit 400, the circuit scale of the pixel array unit 214 can bereduced as compared with a case where the address event detection unit400 is arranged for each pixel.

3. Third Embodiment

In the above-described first embodiment, the connection transistor 313and the floating diffusion layer 314 have been arranged for each pixel.However, the circuit scale of the pixel array unit 214 increases as thenumber of pixels increases. A solid-state image sensor 200 according toa second embodiment is different from that of the first embodiment inthat a plurality of pixels shares one floating diffusion layer 314.

FIG. 14 is a plan view illustrating a configuration example of a pixelarray unit 214 according to the third embodiment of the presenttechnology. In the pixel array unit 214 of the third embodiment, aplurality of FD shared blocks 302 is arrayed in a two-dimensionallattice manner. In each of the FD shared blocks 302, a plurality ofpixels 300 sharing one floating diffusion layer 314 is arrayed.

FIG. 15 is a block diagram illustrating a configuration example of theFD shared block 302 according to the third embodiment of the presenttechnology. An address event detection unit 400 and a pixel circuit 310are arranged in the FD shared block 302. In the pixel circuit 310, aplurality of photoelectric conversion elements 311, a plurality oftransfer transistors 312, a connection transistor 313, a floatingdiffusion layer 314, an amplification transistor 315, and a selectiontransistor 316 are arranged.

The numbers of the photoelectric conversion elements 311 and thetransfer transistors 312 are the same as the number of pixels in the FDshared block 302. Furthermore, the connection configuration of theconnection transistor 313, the floating diffusion layer 314, theamplification transistor 315, and the selection transistor 316 issimilar to that of the first embodiment.

The n-th (n is an integer) transfer transistor 312 transfers a chargefrom the n-th photoelectric conversion element 311 to the floatingdiffusion layer 314 according to a transfer signal TRGn. Furthermore, inFIG. 15 , a set of the photoelectric conversion element 311 and thetransfer transistor 312, and a rear-stage circuit constitute one pixel300.

With the above connection configuration, the floating diffusion layer314 and the rear-stage circuit (address event detection unit 400, andthe like) are shared by the plurality of pixels 300.

A drive circuit 211 selects one of the plurality of pixels 300 in the FDshared block 302 in each of an imaging mode and a detection mode, andsupplies a control signal RST_DVM to the pixel 300. The pixel 300 to beselected is switched at regular intervals, for example.

Note that the second embodiment can also be applied to the solid-stateimage sensor 200 of the third embodiment. In this case, each of thepixel circuits 310 illustrated in FIG. 12 is only required to bereplaced with the circuits illustrated in FIG. 14 .

As described above, according to the third embodiment of the presenttechnology, since the plurality of pixels shares the floating diffusionlayer 314 and the rear-stage circuit, the circuit scale of the pixelarray unit 214 can be reduced as compared with a case where the floatingdiffusion layer 314 and the like are provided for each pixel.

4. Fourth Embodiment

In the above-described first embodiment, the floating diffusion layer314 has been initialized with the connection transistor 313 in the closestate. With the configuration, the power supply voltage connected to thefloating diffusion layer 314 at the initialization is the same as thatof the address event detection unit 400. Therefore, the power supplyvoltage to be used for initialization cannot be adjusted to a valuedifferent from the power supply voltage of the address event detectionunit 400, and reset level adjustment may be difficult. A solid-stateimage sensor 200 according to a fourth embodiment is different from thatof the first embodiment in that a reset transistor for initializing afloating diffusion layer 314 is added separately from a connectiontransistor 313.

FIG. 16 is a block diagram illustrating a configuration example of apixel 300 according to the fourth embodiment of the present technology.The pixel 300 of the fourth embodiment is different from that of thefirst embodiment in that a reset transistor 317 is further provided in apixel circuit 310. An N-type MOS transistor is used as the resettransistor 317, for example.

The reset transistor 317 connects the floating diffusion layer 314 to apower supply voltage VDD2 according to a reset signal RST from a drivecircuit 211, and initializes the floating diffusion layer 314.Furthermore, a power supply voltage of an address event detection unit400 is set to VDD1. The drive circuit 211 supplies a control signal DVMto the connection transistor 313.

The power supply voltage VDD2 used for initialization may be the same asor different from the power supply voltage VDD1 of the address eventdetection unit 400. By adding the reset transistor 317, the power supplyvoltage VDD2 used for initialization can be adjusted to a valuedifferent from the power supply voltage VDD1 of the address eventdetection unit 400. Thereby, the reset level adjustment becomes easy.

FIG. 17 is a timing chart illustrating an example of an operation of thesolid-state image sensor 200 in a detection mode according to the fourthembodiment of the present technology. For example, when the detectionmode is set at timing TO, the drive circuit 211 sets the control signalDVM and a transfer signal TRG to high level. Meanwhile, in the detectionmode, the reset signal RST and a selection signal SEL are controlled to,for example, low level.

FIG. 18 is a timing chart illustrating an example of an operation of thesolid-state image sensor 200 in an imaging mode according to the fourthembodiment of the present technology. For example, when the imaging modeis set at timing TO, the drive circuit 211 sets the control signal DVMto the low level.

The drive circuit 211 supplies the high-level reset signal RST over areset period from timing T11 to T12 to initialize the floating diffusionlayer 314. Subsequent control is similar to the control of the firstembodiment.

Note that the second or third embodiment can also be applied to thesolid-state image sensor 200 of the fourth embodiment.

As described above, according to the fourth embodiment of the presenttechnology, since the reset transistor 317 for initializing the floatingdiffusion layer 314 is added, the power supply voltage used forinitialization can be adjusted to a value different from the powersupply voltage of the address event detection unit 400. Thereby, thereset level adjustment becomes easy.

5. Fifth Embodiment

In the above-described first embodiment, the pixel 300 has generated thepixel signal with the constant charge-voltage conversion efficiency. Itis desirable to switch the conversion efficiency and generate the pixelsignal from the viewpoint of reducing noise at low illuminance. Asolid-state image sensor 200 according to a fifth embodiment isdifferent from that of the first embodiment in that a conversionefficiency control transistor for controlling charge-voltage conversionefficiency is added.

FIG. 19 is a block diagram illustrating a configuration example of apixel 300 according to the fifth embodiment of the present technology.The pixel 300 of the fifth embodiment is different from that of thefirst embodiment in that a conversion efficiency control transistor 318is further provided in a pixel circuit 310. An N-type MOS transistor isused as the conversion efficiency control transistor 318, for example.Further, the conversion efficiency control transistor 318 is insertedbetween a connection transistor 313 and a floating diffusion layer 314.

The conversion efficiency control transistor 318 controls thecharge-voltage conversion efficiency according to a control signal FDGfrom a drive circuit 211.

Furthermore, in the fifth embodiment, an imaging mode includes ahigh-efficiency imaging mode in which higher one of two differentcharge-voltage conversion efficiencies is set, and a low-efficiencyimaging mode in which the lower one is set. In capturing image data, forexample, pixel signal generation in one of the high-efficiency imagingmode and the low-efficiency imaging mode and pixel signal generation inthe other mode are performed in order.

FIG. 20 is a timing chart illustrating an example of an operation of thesolid-state image sensor 200 in a detection mode according to the fifthembodiment of the present technology. For example, when the detectionmode is set at timing TO, the drive circuit 211 sets a control signalRST_DVM, a control signal FDG, and a transfer signal TRG to high level.Meanwhile, in the detection mode, the selection signal SEL is controlledto, for example, the low level.

FIG. 21 is a timing chart illustrating an example of an operation of thesolid-state image sensor 200 in the high-efficiency imaging modeaccording to the fifth embodiment of the present technology.

In a readout period such as timing T4 to T5, the drive circuit 211supplies the high-level reset signal RST and the high-level controlsignal FDG over a reset period from timing T11 to T12 to initialize thefloating diffusion layer 314. As a result, a reset level is generated.Then, the drive circuit 211 sets a selection signal SEL to the highlevel in a conversion period from timing T13 to T14, and a column signalprocessing unit 250 performs AD conversion for the reset level.

Next, the drive circuit 211 supplies the high-level transfer signal TRGto transfer a charge to the floating diffusion layer 314 while settingthe control signal FDG to the low level over a transfer period fromtiming T15 to T16. As a result, the signal level is generated with thehigher conversion efficiency. Then, the drive circuit 211 sets theselection signal SEL to the high level and the column signal processingunit 250 performs AD conversion for the signal level in the conversionperiod from timing T17 to T18.

FIG. 22 is a timing chart illustrating an example of an operation of thesolid-state image sensor 200 in the low-efficiency imaging modeaccording to the fifth embodiment of the present technology.

The drive circuit 211 supplies the high-level reset signal RST and thehigh-level control signal FDG over the reset period from timing T11 toT12 to initialize the floating diffusion layer 314. As a result, a resetlevel is generated. Furthermore, the drive signal FDG is maintained atthe high level even after timing T12. Then, the drive circuit 211 sets aselection signal SEL to the high level in a conversion period fromtiming T13 to T14, and a column signal processing unit 250 performs ADconversion for the reset level.

Next, the drive circuit 211 supplies the high-level transfer signal TRGto transfer the charge to the floating diffusion layer 314 while settingthe control signal FDG to the high level over the transfer period fromtiming T15 to T16. As a result, the signal level is generated with thelower conversion efficiency. Then, the drive circuit 211 sets theselection signal SEL to the high level and the column signal processingunit 250 performs AD conversion for the signal level in the conversionperiod from timing T17 to T18.

In the imaging mode, the column signal processing unit 250 generates adigital signal Dout by AD conversion processing and CDS processing.Then, in a case where the digital signal Dout with the high conversionefficiency is less than a full scale for each pixel, the column signalprocessing unit 250 corrects the signal as necessary and outputs thesignal as a signal of the pixel. On the other hand, in a case where thedigital signal Dout with the high conversion efficiency is the fullscale, the column signal processing unit 250 corrects the digital signalDout with the low conversion efficiency as necessary and outputs thesignal as the signal of the pixel. Thereby, the dynamic range can beexpanded and the noise of the low-illuminance signal can be reduced.

Note that the column signal processing unit 250 performs the CDSprocessing but can be configured no to perform the CDS processing. Inthis case, as illustrated in FIGS. 23 and 24 , the selection signal SELis set to the low level and the reset level is not converted untiltiming T14.

Note that the second or third embodiment can also be applied to thesolid-state image sensor 200 of the fifth embodiment.

As described above, according to the fifth embodiment of the presenttechnology, since the conversion efficiency control transistor 318 forcontrolling the charge-voltage conversion efficiency is added, the pixelsignal is generated while switching the conversion efficiency, and thenoise at low illuminance can be reduced.

6. Sixth Embodiment

In the above-described fifth embodiment, the floating diffusion layer314 has been initialized with the connection transistor 313 and theconversion efficiency control transistor 318 in the close state.However, with the configuration, the power supply voltage connected tothe floating diffusion layer 314 at the initialization is the same asthat of the address event detection unit 400. Therefore, the powersupply voltage to be used for initialization cannot be adjusted to avalue different from the power supply voltage of the address eventdetection unit 400, and reset level adjustment may be difficult. Asolid-state image sensor 200 according to a sixth embodiment isdifferent from that of the fifth embodiment in that the fourthembodiment is further applied.

FIG. 25 is a block diagram illustrating a configuration example of apixel 300 according to the sixth embodiment of the present technology.The pixel 300 of the sixth embodiment is different from that of thefifth embodiment in that a reset transistor 317 is further provided in apixel circuit 310.

The reset transistor 317 initializes a floating diffusion layer 314according to a reset signal RST from a drive circuit 211. The resettransistor 317 is inserted between a terminal of a power supply voltageVSDD2 and a connection point of a connection transistor 313 and aconversion efficiency control transistor 318. Furthermore, a powersupply voltage of an address event detection unit 400 is set to VDD1.The drive circuit 211 supplies a control signal DVM to the connectiontransistor 313.

The power supply voltage VDD2 used for initialization may be the same asor different from the power supply voltage VDD1 of the address eventdetection unit 400. By adding the reset transistor 317, the power supplyvoltage VDD2 used for initialization can be adjusted to a valuedifferent from the power supply voltage VDD1 of the address eventdetection unit 400.

FIG. 26 is a timing chart illustrating an example of an operation of thesolid-state image sensor 200 in a detection mode according to the sixthembodiment of the present technology. For example, when a detection modeis set at timing TO, the drive circuit 211 sets a control signal DVM, acontrol signal FDG, and a transfer signal TRG to high level. Meanwhile,in the detection mode, the reset signal RST and a selection signal SELare controlled to, for example, low level.

FIG. 27 is a timing chart illustrating an example of an operation of thesolid-state image sensor 200 in a high-efficiency imaging mode accordingto the sixth embodiment of the present technology. For example, when theimaging mode is set at timing TO, the drive circuit 211 sets the controlsignal DVM to the low level.

The drive circuit 211 supplies a high-level reset signal RST and ahigh-level control signal FDG over a reset period from predeterminedtiming T11 to T12 to initialize the floating diffusion layer 314.Subsequent control is similar to the control of the fifth embodiment.

FIG. 28 is a timing chart illustrating an example of an operation of thesolid-state image sensor 200 in the low-efficiency imaging modeaccording to the sixth embodiment of the present technology. A controlsignal DVM is set to the low level.

As described above, according to the sixth embodiment of the presenttechnology, since the reset transistor 317 for initializing the floatingdiffusion layer 314 is added, the power supply voltage used forinitialization can be adjusted to a value different from the powersupply voltage of the address event detection unit 400. Thereby, thereset level adjustment becomes easy.

7. Seventh Embodiment

In the above-described first embodiment, the voltage of the floatingdiffusion layer 314 has been amplified with a fixed gain by theamplification transistor 315. However, the gain may be insufficient onlyby the amplification transistor 315. A solid-state image sensor 200according to a seventh embodiment is different from that of the firstembodiment in that a difference between pixel signals of a pair ofpixels is amplified and read out.

FIG. 29 is a block diagram illustrating a configuration example of thesolid-state image sensor 200 according to the seventh embodiment of thepresent technology. The solid-state image sensor 200 according to theseventh embodiment is different from that of the first embodiment infurther including a column readout circuit 260.

The column readout circuit 260 amplifies and reads a difference betweenpixel signals of a pair of adjacent pixels. The column readout circuit260 supplies the amplified signal to a column signal processing unit250. Note that the column readout circuit 260 is an example of a readoutcircuit described in claims.

FIG. 30 is a block diagram illustrating a configuration example of thecolumn readout circuit 260 according to the seventh embodiment of thepresent technology. In the column readout circuit 260, a plurality ofunit readout circuits 270 is arrayed along a horizontal direction. Theunit readout circuit 270 is arranged for every two columns. Assumingthat the number of columns of a pixel array unit 214 is Y, the number ofthe unit readout circuits 270 is Y/2.

The unit readout circuit 270 amplifies the difference between the pixelsignals of the corresponding two columns and supplies the amplifieddifference to the column signal processing unit 250.

Furthermore, in the column signal processing unit 250 of the seventhembodiment, an AD converter 251 is arranged for each unit readoutcircuit 270, not for each column.

FIG. 31 is a circuit diagram illustrating a configuration example of theunit readout circuit 270 according to the seventh embodiment of thepresent technology. The unit readout circuit 270 includes P-typetransistors 271 and 272, switches 273 to 276, and a current source 277.A MOS transistor is used as the P-type transistors 271 and 272, forexample.

Furthermore, a vertical current line VPX is wired in addition to avertical signal line VSL for each column along a column direction in thepixel array unit 214. The vertical signal line VSL and the verticalcurrent line VPX in the 2k-th (k is an integer) column are verticalsignal line VSL_(2k) and vertical current line VPX_(2k). Furthermore,the vertical signal line VSL and the vertical current line VPX in the(2k+1)th column are vertical signal line VSL_(2k+1) and vertical currentline VPX_(2k+1).

A drain of an amplification transistor 315 in the 2k-th column isconnected to the vertical current line VPX_(2k), and a drain of anamplification transistor 315 in the (2k+1)th column is connected to thevertical current line VPX_(2k+1).

The P-type transistors 271 and 272 are connected in parallel to aterminal of a power supply voltage VDD. Furthermore, gates of thesetransistors are connected to each other.

The switch 273 opens or closes a path between a gate and a drain of theP-type transistor 271 according to a control signal SW3 from a drivecircuit 211. The switch 274 opens or closes a path between a gate and adrain of the P-type transistor 272 according to a control signal SW4from the drive circuit 211.

The switch 275 opens or closes a path between the drain of the P-typetransistor 271 and the column signal processing unit 250 according to acontrol signal SW2 from the drive circuit 211. The switch 276 opens orcloses a path between the drain of the P-type transistor 272 and thecolumn signal processing unit 250 according to a control signal SW1 fromthe drive circuit 211.

The current source 277 supplies a predetermined constant current. Thecurrent source 277 is commonly connected to the vertical current linesVPX_(2k) and VPX_(2k+1).

The drive circuit 211 uses one of the 2k-th column and the (2k+1)thcolumn in a selected row as a reference pixel and the other as a signalpixel. First, for example, the drive circuit 211 uses the pixel in the2k-th column as the signal pixel and the pixel in the (2k+1)th column asthe reference pixel. Next, the drive circuit 211 uses the pixel in the2k-th column as the reference pixel and the pixel in the (2k+1)th columnas the signal pixel. Furthermore, it is assumed that a transfer signalTRG1 is supplied to the 2k-th column and a transfer signal TRG2 issupplied to the (2k+1)th column.

In the case of using the pixel in the 2k-th column as the signal pixel,the drive circuit 211 sets the switches 274 and 275 to be in a closestate and the switches 273 and 276 to be in an open state, using thecontrol signal. Thereby, the unit readout circuit 270 and the signalpixel and the reference pixel constitute a differential amplifiercircuit. Meanwhile, in the case of using the pixel in the (2k+1)thcolumn as the signal pixel, the drive circuit 211 sets the switches 274and 275 to be in the open state and the switches 273 and 276 to be inthe close state, using the control signal.

The unit readout circuit 270 amplifies the difference between the pixelsignals of the reference pixel and the signal pixel, and supplies theamplified signal as the pixel signal of the signal pixel to the columnsignal processing unit 250.

FIG. 32 is a timing chart illustrating an example of an operation of thesolid-state image sensor in a detection mode according to the seventhembodiment of the present technology. The control of the seventhembodiment is similar to the control of the fourth embodimentillustrated in FIG. 18 , except that transfer timings of the 2k-thcolumn and the (2k+1)th column are different.

In the case of reading the 2k-th column first, the drive circuit 211supplies a high-level transfer signal TRG1 to the 2k-th column in atransfer period from timing T15 to T16. Meanwhile, a transfer signalTRG2 to the (2k+1)th column remains at low level in this transferperiod. A potential Vfd1 of a floating diffusion layer 314 in the 2k-thcolumn changes from a reset level to a signal level by transfer, while apotential Vfd2 of the floating diffusion layer 314 in the 2k-th columnremains at the reset level. Then, after reading the 2k-th column, the(2k+1)th column is read by the transfer signal TRG2.

Note that each of the second to sixth embodiments can be applied to thesolid-state image sensor 200 of the seventh embodiment.

As described above, according to the seventh embodiment of the presenttechnology, since the column readout circuit 260 amplifies thedifference between the pixel signals of a pair of pixels, the gain canbe made larger than a case where the difference is amplified by only theamplification transistor 315.

8. Eighth Embodiment

In the above-described seventh embodiment, the column readout circuit260 has amplified the difference between the pixel signals of a pair ofpixels, but noise is also amplified together with the signals. Asolid-state image sensor 200 according to an eighth embodiment isdifferent from that of the seventh embodiment in suppressing the noiseby horizontally connecting unit readout circuits 270.

FIG. 33 is a circuit diagram illustrating a configuration example of aunit readout circuit 270 according to the eighth embodiment of thepresent technology. The unit readout circuit 270 of the eighthembodiment is different from that of the seventh embodiment in furtherincluding switches 278 and 279.

The switch 279 opens or closes a path between gates of P-typetransistors 271 and 272 constituting a current mirror circuit and anadjacent unit readout circuit 270 according to a control signal SW6 froma drive circuit 211. Note that the switch 279 is an example of a firstswitch described in the claims.

The switch 278 opens or closes a path between a current source 277 andthe adjacent unit readout circuit 270 according to a control signal SW5from the drive circuit 211. Note that the switch 278 is an example of asecond switch described in the claims.

The drive circuit 211 sets the switches 278 and 279 to be in a closestate in an imaging mode, thereby horizontally connecting a plurality ofcurrent sources 277 arrayed in a horizontal direction and a plurality ofcurrent mirror circuits. Thereby, the noise generated in nodes can besuppressed according to the number of nodes to be horizontallyconnected.

As described above, according to the eighth embodiment of the presenttechnology, since the plurality of current sources 277 and the pluralityof current mirror circuits are horizontally connected, the noise can besuppressed while amplifying the difference between a pair of pixelsignals.

9. Ninth Embodiment

In the above-described first embodiment, the AD converter 251 has beenarranged for each column and the AD conversion has been performed inunits of rows. However, the time required for the AD conversion becomeslonger as the number of rows increases. A solid-state image sensor 200according to a ninth embodiment is different from that of the firstembodiment in arranging an AD converter for each pixel to shorten timerequired for AD conversion.

FIG. 34 is a block diagram illustrating a configuration example of thesolid-state image sensor 200 according to the ninth embodiment of thepresent technology. The solid-state image sensor 200 according to theninth embodiment is different from that of the first embodiment infurther including a time code generation unit 215.

The time code generation unit 215 generates a time code representingtime within a period during which a reference signal is converted into aslope shape.

FIG. 35 is a plan view illustrating a configuration example of a pixelarray unit 214 according to the ninth embodiment of the presenttechnology. The pixel array unit 214 of the ninth embodiment furtherincludes a plurality of time code transfer units 303.

The time code transfer unit 303 transfers the time code along a columndirection. The time code transfer unit 303 transfers the time code topixels 300 on both sides. In a case where M (M is an integer) columnsare arranged on both sides of the time code transfer unit 303, the timecode transfer unit 303 is arranged for each M columns.

The pixel 300 holds the time code at timing when a comparison resultbetween a reference signal and a pixel signal is inverted. Then, thepixel 300 outputs the held time code to the time code transfer unit 303as a digital signal after AD conversion. The time code transfer unit 303transfers the digital signal to a column signal processing unit 250.

Furthermore, an AD converter 251 is not arranged in the column signalprocessing unit 250 of the ninth embodiment, and the column signalprocessing unit 250 performs CDS processing and the like.

FIG. 36 is a block diagram illustrating a configuration example of thepixel 300 according to the ninth embodiment of the present technology.The pixel 300 according to the ninth embodiment is different from thatof the first embodiment in further including an AD converter 320.

Furthermore, an amplification transistor 315 and a selection transistor316 are not arranged in a pixel circuit 310 of the ninth embodiment, anda voltage of a floating diffusion layer 314 is supplied to the ADconverter 320 as a pixel signal Vsig.

The AD converter 320 converts the analog pixel signal Vsig from thepixel circuit 310 into a digital signal. The AD converter 320 includes acomparison circuit 321 and a data storage unit 370. The comparisoncircuit 321 includes a differential input circuit 340, a voltageconversion circuit 350, and a positive feedback circuit 360.

The differential input circuit 340 amplifies a difference between theanalog pixel signal Vsig and a predetermined reference signal REF andsupplies an amplified signal to the voltage conversion circuit 350. Asthe reference signal REF, for example, a ramp signal that changes in aslope shape is used.

The voltage conversion circuit 350 converts a voltage of the signal fromthe differential input circuit 340 and outputs the converted voltage tothe positive feedback circuit 360.

The positive feedback circuit 360 adds a part of output to input andoutputs the output as an output signal VCO to the data storage unit 370.

The data storage unit 370 holds a time code of when the output signalVCO is inverted. The data storage unit 370 outputs the held time code tothe time code transfer unit 303 as a digital signal after AD conversion.

As described above, by arranging the AD converter 320 for each pixel,the solid-state image sensor 200 can simultaneously perform ADconversion for all the pixels. Thereby, the time required for ADconversion can be shortened as compared with the case where ADconversion is performed for each row.

Note that the pixel 300 holds the time code, but the pixel 300 can holda luminance code indicating a value of the reference signal REF insteadof the time code. In this case, a luminance code generation unit and aluminance code transfer unit are arranged in place of the time codegeneration unit 215 and the time code transfer unit 303.

Furthermore, the second to sixth embodiments can be applied to thesolid-state image sensor 200 of the ninth embodiment.

As described above, according to the ninth embodiment of the presenttechnology, since the AD converter 320 is arranged for each pixel, theAD conversion can be performed for all the pixels 300 at the same time.Thereby, the time required for AD conversion can be shortened ascompared with the case where AD conversion is performed for each row.

10. Applications to Moving Bodies

The technology according to the present disclosure (present technology)can be applied to various products. For example, the technologyaccording to the present disclosure may be realized as a device mountedon any type of moving bodies including an automobile, an electricautomobile, a hybrid electric automobile, a motorcycle, a bicycle, apersonal mobility, an airplane, a drone, a ship, a robot, and the like.

FIG. 37 is a block diagram illustrating a schematic configurationexample of a vehicle control system as an example of a moving bodycontrol system to which the technology according to the presentdisclosure is applicable.

A vehicle control system 12000 includes a plurality of electroniccontrol units connected through a communication network 12001. In theexample illustrated in FIG. 37 , the vehicle control system 12000includes a drive system control unit 12010, a body system control unit12020, a vehicle exterior information detection unit 12030, a vehicleinterior information detection unit 12040, and an integrated controlunit 12050. Furthermore, as functional configurations of the integratedcontrol unit 12050, a microcomputer 12051, a sound image output unit12052, and an in-vehicle network interface (I/F) 12053 are illustrated.

The drive system control unit 12010 controls operations of devicesregarding a drive system of a vehicle according to various programs. Forexample, the drive system control unit 12010 functions as a controldevice of a drive force generation device for generating drive force ofa vehicle, such as an internal combustion engine or a drive motor, adrive force transmission mechanism for transmitting drive force towheels, a steering mechanism that adjusts a steering angle of a vehicle,a braking device that generates braking force of a vehicle, and thelike.

The body system control unit 12020 controls operations of variousdevices equipped in a vehicle body according to various programs. Forexample, the body system control unit 12020 functions as a controldevice of a keyless entry system, a smart key system, an automaticwindow device, and various lamps such as head lamps, back lamps, brakelamps, turn signals, and fog lamps. In this case, radio wavestransmitted from a mobile device substituted for a key or signals ofvarious switches can be input to the body system control unit 12020. Thebody system control unit 12020 receives an input of the radio waves orthe signals, and controls a door lock device, the automatic windowdevice, the lamps, and the like of the vehicle.

The vehicle exterior information detection unit 12030 detectsinformation outside the vehicle that mounts the vehicle control system12000. For example, an imaging unit 12031 is connected to the vehicleexterior information detection unit 12030. The vehicle exteriorinformation detection unit 12030 causes the imaging unit 12031 tocapture an image outside the vehicle, and receives the captured image.The vehicle exterior information detection unit 12030 may perform objectdetection processing or distance detection processing of persons,vehicles, obstacles, signs, letters on a road surface, or the like onthe basis of the received image.

The imaging unit 12031 is an optical sensor that receives light andoutputs an electrical signal according to a light-receiving amount ofthe light. The imaging unit 12031 can output the electrical signal as animage and can output the electrical signal as information of distancemeasurement. Furthermore, the light received by the imaging unit 12031may be visible light or may be non-visible light such as infrared light.

The vehicle interior information detection unit 12040 detectsinformation inside the vehicle. A driver state detection unit 12041 thatdetects a state of a driver is connected to the vehicle interiorinformation detection unit 12040, for example. The driver statedetection unit 12041 includes a camera that captures the driver, forexample, and the vehicle interior information detection unit 12040 maycalculate the degree of fatigue or the degree of concentration of thedriver, or may determine whether or not the driver falls asleep on thebasis of the detection information input from the driver state detectionunit 12041.

The microcomputer 12051 calculates a control target value of the driveforce generation device, the steering mechanism, or the braking deviceon the basis of the information outside and inside the vehicle acquiredin the vehicle exterior information detection unit 12030 or the vehicleinterior information detection unit 12040, and can output a controlcommand to the drive system control unit 12010. For example, themicrocomputer 12051 can perform cooperative control for the purpose ofrealization of an advanced driver assistance system (ADAS) functionincluding collision avoidance or shock mitigation of the vehicle,following travel based on an inter-vehicle distance, vehicle speedmaintaining travel, collision warning of the vehicle, lane out warningof the vehicle, and the like.

Furthermore, the microcomputer 12051 controls the drive force generationdevice, the steering mechanism, the braking device, or the like on thebasis of the information of a vicinity of the vehicle acquired in thevehicle exterior information detection unit 12030 or the vehicleinterior information detection unit 12040 to perform cooperative controlfor the purpose of automatic drive of autonomous travel withoutdepending on an operation of the driver or the like.

Furthermore, the microcomputer 12051 can output a control command to thebody system control unit 12020 on the basis of the information outsidethe vehicle acquired in the vehicle exterior information detection unit12030. For example, the microcomputer 12051 can perform cooperativecontrol for the purpose of achievement of non-glare such as bycontrolling the head lamps according to the position of a leadingvehicle or an oncoming vehicle detected in the vehicle exteriorinformation detection unit 12030, and switching high beam light to lowbeam light.

The sound image output unit 12052 transmits an output signal of at leastone of a sound or an image to an output device that can visually andaurally notify a passenger of the vehicle or an outside of the vehicleof information. In the example in FIG. 37 , as the output device, anaudio speaker 12061, a display unit 12062, and an instrument panel 12063are exemplarily illustrated. The display unit 12062 may include, forexample, at least one of an on-board display or a head-up display.

FIG. 38 is a diagram illustrating an example of an installation positionof the imaging unit 12031.

In FIG. 38 , imaging units 12101, 12102, 12103, 12104, and 12105 areincluded as the imaging unit 12031.

The imaging units 12101, 12102, 12103, 12104, and 12105 are provided atpositions of a front nose, side mirrors, a rear bumper, a back door, anupper portion of a windshield, and the like in an interior of a vehicle12100, for example. The imaging unit 12101 provided at the front noseand the imaging unit 12105 provided at an upper portion of thewindshield in an interior of the vehicle mainly acquire images in frontof the vehicle 12100. The imaging units 12102 and 12103 provided at theside mirrors mainly acquire images on sides of the vehicle 12100. Theimaging unit 12104 provided at the rear bumper or the back door mainlyacquires images in back of the vehicle 12100. The imaging unit 12105provided at the upper portion of the windshield in the interior of thevehicle is mainly used for detecting a leading vehicle, a pedestrian, anobstacle, a traffic signal, a traffic sign, a lane, or the like.

Note that FIG. 38 illustrates an example of capture ranges of theimaging units 12101 to 12104. An imaging range 12111 indicates theimaging range of the imaging unit 12101 provided at the front nose,imaging ranges 12112 and 12113 respectively indicate the imaging rangesof the imaging units 12102 and 12103 provided at the side mirrors, andan imaging range 12114 indicates the imaging range of the imaging unit12104 provided at the rear bumper or the back door. For example, abird's-eye view image of the vehicle 12100 as viewed from above can beobtained by superimposing image data captured by the imaging units 12101to 12104.

At least one of the imaging units 12101 to 12104 may have a function toacquire distance information. For example, at least one of the imagingunits 12101 to 12104 may be a stereo camera including a plurality ofimage sensors or may be an image sensor having pixels for phasedifference detection.

For example, the microcomputer 12051 obtains distances tothree-dimensional objects in the imaging ranges 12111 to 12114 andtemporal change of the distances (relative speeds to the vehicle 12100)on the basis of the distance information obtained from the imaging units12101 to 12104, thereby to extract particularly a three-dimensionalobject closest to the vehicle 12100 on a traveling road and traveling ata predetermined speed (for example, 0 km/h or more) in substantially thesame direction as the vehicle 12100 as a leading vehicle. Moreover, themicrocomputer 12051 can set an inter-vehicle distance to be secured fromthe leading vehicle in advance and perform automatic braking control(including following stop control) and automatic acceleration control(including following start control), and the like. In this way, thecooperative control for the purpose of automatic drive of autonomoustravel without depending on an operation of the driver, and the like canbe performed.

For example, the microcomputer 12051 classifies three-dimensional objectdata regarding three-dimensional objects into two-wheeled vehicles,ordinary cars, large vehicles, pedestrians, and other three-dimensionalobjects such as electric poles to be extracted, on the basis of thedistance information obtained from the imaging units 12101 to 12104, andcan use the data for automatic avoidance of obstacles. For example, themicrocomputer 12051 discriminates obstacles around the vehicle 12100into obstacles visually recognizable by the driver of the vehicle 12100and obstacles visually unrecognizable by the driver. The microcomputer12051 then determines a collision risk indicating a risk of collisionwith each of the obstacles, and can perform drive assist for collisionavoidance by outputting warning to the driver through the audio speaker12061 or the display unit 12062, and performing forced deceleration oravoidance steering through the drive system control unit 12010, in acase where the collision risk is a set value or more and there is acollision possibility.

At least one of the imaging units 12101 to 12104 may be an infraredcamera that detects infrared light. For example, the microcomputer 12051determines whether or not a pedestrian exists in the captured images ofthe imaging units 12101 to 12104, thereby to recognize the pedestrian.Such recognition of a pedestrian is performed by a process of extractingcharacteristic points in the captured images of the imaging units 12101to 12104, as the infrared camera, for example, and by a process ofperforming pattern matching processing for the series of characteristicpoints indicating a contour of an object and determining whether or notthe object is a pedestrian. When the microcomputer 12051 determines thata pedestrian exists in the captured images of the imaging units 12101 to12104 and recognizes the pedestrian, the sound image output unit 12052causes the display unit 12062 to superimpose and display a squarecontour line for emphasis on the recognized pedestrian. Furthermore, thesound image output unit 12052 may cause the display unit 12062 todisplay an icon or the like representing the pedestrian at a desiredposition.

An example of a vehicle control system to which the technology accordingto the present disclosure is applicable has been described. Thetechnology according to the present disclosure is applicable to theimaging unit 12031, of the above-described configurations. To bespecific, the imaging device 100 in FIG. 1 can be applied to the imagingunit 12031. By applying the technology according to the presentdisclosure to the imaging unit 12031, high-quality image data can becaptured while detecting an address event.

Note that the above-described embodiments describe an example forembodying the present technology, and the matters in the embodiments andthe matters used to specify the invention in the claims havecorresponding relationships with each other. Similarly, the matters usedto specify the invention in the claims and the matters in the embodimentof the present technology given the same names have correspondingrelationships with each other. However, the present technology is notlimited to the embodiments, and can be embodied by application ofvarious modifications to the embodiments without departing from the gistof the present technology.

Furthermore, the processing procedures described in the aboveembodiments may be regarded as a method having these series ofprocedures, and also regarded as a program for causing a computer toexecute these series of procedures and as a recording medium for storingthe program. As this recording medium, for example, a compact disc (CD),a MiniDisc (MD), a digital versatile disc (DVD), a memory card, aBlu-ray (registered trademark) disc, or the like can be used.

Note that the effects described in the present specification are merelyexamples and are not limited, and other effects may be exhibited.

Note that the present technology can also have the followingconfigurations.

(1) A solid-state image sensor including:

-   -   a photoelectric conversion element configured to generate a        charge by photoelectric conversion;    -   a charge accumulation unit configured to accumulate the charge        and generate a voltage according to an amount of the charge;    -   a transfer transistor configured to transfer the charge from the        photoelectric conversion element to the charge accumulation        unit;    -   a detection unit configured to detect whether or not a change        amount of a photocurrent according to the amount of the charge        exceeds a predetermined threshold; and    -   a connection transistor configured to connect the charge        accumulation unit and the detection unit and allow the        photocurrent to flow.

(2) The solid-state image sensor according to (1), in which

-   -   the photoelectric conversion element, the charge accumulation        unit, and the connection transistor are arranged in each of a        predetermined number of pixels, and    -   the predetermined number of pixels shares the detection unit.

(3) The solid-state image sensor according to (1) or (2), in which

-   -   the photoelectric conversion element and the transfer transistor        are arranged in each of a predetermined number of pixels, and    -   the predetermined number of pixels shares the charge        accumulation unit.

(4) The solid-state image sensor according to any one of (1) to (3), inwhich the connection transistor transitions to a close state to connectthe charge accumulation unit and the detection unit in a case where apredetermined detection mode for detecting whether or not the changeamount exceeds the threshold is set, and connects the chargeaccumulation unit and the detection unit for a first pulse period beforethe charge is transferred in a case where a predetermined imaging modefor capturing image data is set.

(5) The solid-state image sensor according to any one of (1) to (4),further including:

-   -   a reset transistor configured to initialize the charge        accumulation unit.

(6) The solid-state image sensor according to (5), in which

-   -   the connection transistor transitions to a close state to        connect the charge accumulation unit and the detection unit in a        case where a predetermined detection mode for detecting whether        or not the change amount exceeds the threshold is set, and        transitions to an open state in a case where a predetermined        imaging mode for capturing image data is set, and    -   the reset transistor initializes the charge accumulation unit        over a predetermined reset period in the case where the imaging        mode is set.

(7) The solid-state image sensor according to (1), further including:

-   -   a conversion efficiency control transistor configured to control        conversion efficiency for converting the charge into the        voltage.

(8) The solid-state image sensor according to (7), in which

-   -   the connection transistor transitions to a close state to        connect the charge accumulation unit and the detection unit in a        case where a predetermined detection mode for detecting whether        or not the change amount exceeds the threshold is set, and        connects the charge accumulation unit and the detection unit        over a predetermined reset period in a case where a        predetermined imaging mode for capturing image data is set, and    -   the conversion efficiency control transistor controls the        conversion efficiency within a transfer period in which the        charge is transferred in the case where the imaging mode is set.

(9) The solid-state image sensor according to (1), further including:

-   -   a reset transistor configured to initialize the charge        accumulation unit; and    -   a conversion efficiency control transistor configured to control        conversion efficiency for converting the charge into the        voltage.

(10) The solid-state image sensor according to (9), in which

-   -   the connection transistor transitions to a close state to        connect the charge accumulation unit and the detection unit in a        case where a predetermined detection mode for detecting whether        or not the change amount exceeds the threshold is set, and        transitions to an open state in a case where a predetermined        imaging mode for capturing image data is set,    -   the reset transistor initializes the charge accumulation unit        within a predetermined reset period in the case where the        imaging mode is set, and    -   the conversion efficiency control transistor controls the        conversion efficiency within a transfer period in which the        charge is transferred in the case where the imaging mode is set.

(11) The solid-state image sensor according to any one of (1) to (10),further including:

-   -   a readout circuit configured to amplify and output a difference        between signals according to the voltages of a pair of pixels,        in which    -   the photoelectric conversion element, the charge accumulation        unit, and the connection transistor are arranged in each of the        pair of pixels.

(12) The solid-state image sensor according to (11), in which

-   -   the transfer transistor includes first and second transfer        transistors,    -   the first transfer transistor is arranged in one of the pair of        pixels and the second transfer transistor is arranged in the        other of the pair of pixels, and    -   one of the first and second transfer transistors transfers the        charge and the other transfer transistor is in an off state        during transfer by the one transfer transistor.

(13) The solid-state image sensor according to (11) or (12), in which

-   -   the readout circuit includes a predetermined number of unit        readout circuits, and    -   each of the unit readout circuits includes    -   a current source,    -   a current mirror circuit,    -   a first switch that connects the current sources of the        predetermined number of unit readout circuits, and    -   a second switch that connects the current mirror circuits of the        predetermined number of unit readout circuits.

(14) The solid-state image sensor according to (1), further including:

-   -   an analog-digital converter configured to convert an analog        signal according to the voltage into a digital signal, in which    -   the photoelectric conversion element, the charge accumulation        unit, the transfer transistor, the detection unit, the        connection transistor, and the analog-digital converter are        arranged in each of a plurality of pixels.

(15) An imaging device including:

-   -   a photoelectric conversion element configured to generate a        charge by photoelectric conversion;    -   a charge accumulation unit configured to accumulate the charge        and generate a voltage according to an amount of the charge;    -   a transfer transistor configured to transfer the charge from the        photoelectric conversion element to the charge accumulation        unit;    -   a detection unit configured to detect whether or not a change        amount of a photocurrent according to the amount of the charge        exceeds a predetermined threshold;    -   a connection transistor configured to connect the charge        accumulation unit and the detection unit and allow the        photocurrent to flow; and    -   a digital signal processing unit configured to process a digital        signal obtained by performing analog-digital conversion for an        analog signal according to the voltage.

(16) A method of controlling a solid-state image sensor, the methodincluding:

-   -   a transfer procedure of transferring, from a photoelectric        conversion element that generates a charge by photoelectric        conversion, the charge to a charge accumulation unit that        accumulates the charge and generates a voltage according to an        amount of the charge;    -   a detection procedure of detecting whether or not a change        amount of a photocurrent according to the amount of the charge        exceeds a predetermined threshold; and    -   a connection procedure of connecting the charge accumulation        unit and the detection unit and allowing the photocurrent to        flow.

REFERENCE SIGNS LIST

-   -   100 Imaging device    -   110 Imaging lens    -   120 Recording unit    -   130 Control unit    -   200 Solid-state image sensor    -   201 Light-receiving chip    -   202 Circuit chip    -   211 Drive circuit    -   212 Detection signal processing unit    -   213 Arbiter    -   214 Pixel array unit    -   215 Time code generation unit    -   250 Column signal processing unit    -   251, 320AD converter    -   252 Memory    -   253 Output unit    -   254 Digital calculation unit    -   255 Interface unit    -   260 Column readout circuit    -   270 Unit readout circuit    -   271, 272, 414, 421, 422, 432, 433, 441, 443P-type transistor    -   273 to 276, 278, 279 Switch    -   277 Current source    -   300 Pixel    -   301 Detection circuit shared block    -   302 FD shared block    -   303 Time code transfer unit    -   310 Pixel circuit    -   311 Photoelectric conversion element    -   312 Transfer transistor    -   313 Connection transistor    -   314 Floating diffusion layer    -   315 Amplification transistor    -   316 Selection transistor    -   317 Reset transistor    -   318 Conversion efficiency control transistor    -   321 Comparison circuit    -   340 Differential input circuit    -   350 Voltage conversion circuit    -   360 Positive feedback circuit    -   370 Data storage unit    -   400 Address event detection unit    -   410 Current-voltage conversion unit    -   412, 415, 435, 442, 444N-type transistor    -   413, 431, 434 Capacitance    -   420 Buffer    -   430 Differentiator circuit    -   440 Comparator    -   450 Transfer unit    -   12031 Imaging unit

1. A solid-state image sensor, comprising: a photoelectric conversionelement configured to generate a charge by photoelectric conversion; acharge accumulation unit configured to accumulate the charge andgenerate a voltage according to an amount of the charge; a detectionunit configured to detect whether or not a change amount of aphotocurrent according to the amount of the charge exceeds a threshold;and a connection transistor configured to connect the chargeaccumulation unit and the detection unit and allow the photocurrent toflow.
 2. The solid-state image sensor according to claim 1, furthercomprising a transfer transistor configured to transfer the charge fromthe photoelectric conversion element to the charge accumulation unit. 3.The solid-state image sensor according to claim 1, wherein thephotoelectric conversion element, the charge accumulation unit, and theconnection transistor are arranged in each of a predetermined number ofpixels, and the predetermined number of pixels shares the detectionunit.
 4. The solid-state image sensor according to claim 2, wherein thephotoelectric conversion element and the transfer transistor arearranged in each of a predetermined number of pixels, and thepredetermined number of pixels shares the charge accumulation unit. 5.The solid-state image sensor according to claim 1, wherein theconnection transistor is further configured to: transition to a closestate to connect the charge accumulation unit and the detection unit ina case where a specific detection mode is set, wherein the specificdetection mode is to detect whether or not the change amount exceeds thethreshold; and connect the charge accumulation unit and the detectionunit for a first pulse period before the charge is transferred in a casewhere a specific imaging mode is set, wherein the specific imaging modeis to for capture image data.
 6. The solid-state image sensor accordingto claim 1, further comprising: a reset transistor configured toinitialize the charge accumulation unit.
 7. The solid-state image sensoraccording to claim 6, wherein the connection transistor is furtherconfigured to: transition to a close state to connect the chargeaccumulation unit and the detection unit in a case where a specificdetection mode is set, wherein the specific detection mode is to detectwhether or not the change amount exceeds the threshold; and transitionto an open state in a case where a specific imaging mode is set, whereinthe specific imaging mode is to capture image data, and the resettransistor is further configured to initialize the charge accumulationunit over a specific reset period in the case where the specific imagingmode is set.
 8. The solid-state image sensor according to claim 1,further comprising: a conversion efficiency control transistorconfigured to control a conversion efficiency to convert the charge intothe voltage.
 9. The solid-state image sensor according to claim 8,wherein the connection transistor is further configured to: transitionto a close state to connect the charge accumulation unit and thedetection unit in a case where a specific detection mode is set, whereinthe specific detection mode is to detect whether or not the changeamount exceeds the threshold; and connect the charge accumulation unitand the detection unit over a specific reset period in a case where aspecific imaging mode is set, wherein the specific imaging mode is tocapture image data, and the conversion efficiency control transistor isfurther configured to control the conversion efficiency within atransfer period in which the charge is transferred in the case where thespecific imaging mode is set.
 10. The solid-state image sensor accordingto claim 1, further comprising: a reset transistor configured toinitialize the charge accumulation unit; and a conversion efficiencycontrol transistor configured to control conversion efficiency forconverting the charge into the voltage.
 11. The solid-state image sensoraccording to claim 10, wherein the connection transistor is furtherconfigured to: transition to a close state to connect the chargeaccumulation unit and the detection unit in a case where a specificdetection mode is set, wherein the specific detection mode is to detectwhether or not the change amount exceeds the threshold; and transitionto an open state in a case where a specific imaging mode is set, whereinthe specific imaging mode is to capture image data, the reset transistoris further configured to initialize the charge accumulation unit withina specific reset period in the case where the specific imaging mode isset, and the conversion efficiency control transistor is furtherconfigured to control the conversion efficiency within a transfer periodin which the charge is transferred in the case where the specificimaging mode is set.
 12. The solid-state image sensor according to claim2, further comprising a readout circuit configured to amplify and outputa difference between signals according to voltages of a pair of pixels,wherein the photoelectric conversion element, the charge accumulationunit, and the connection transistor are arranged in each of the pair ofpixels.
 13. The solid-state image sensor according to claim 12, whereinthe transfer transistor includes first and second transfer transistors,the first transfer transistor is arranged in one of the pair of pixelsand the second transfer transistor is arranged in another of the pair ofpixels, and one transfer transistor of the first and second transfertransistors transfers the charge and another transfer transistor of thefirst and second transfer transistors is in an off state during thetransfer by the one transfer transistor.
 14. The solid-state imagesensor according to claim 12, wherein the readout circuit includes anumber of unit readout circuits, and each of the unit readout circuitsincludes a current source, a current mirror circuit, a first switch thatconnects the current sources of the number of unit readout circuits, anda second switch that connects the current mirror circuits of the numberof unit readout circuits.
 15. The solid-state image sensor according toclaim 2, further comprising: an analog-digital converter configured toconvert an analog signal according to the voltage into a digital signal,wherein the photoelectric conversion element, the charge accumulationunit, the transfer transistor, the detection unit, the connectiontransistor, and the analog-digital converter are arranged in each of aplurality of pixels.
 16. An imaging device, comprising: a photoelectricconversion element configured to generate a charge by photoelectricconversion; a charge accumulation unit configured to accumulate thecharge and generate a voltage according to an amount of the charge; adetection unit configured to detect whether or not a change amount of aphotocurrent according to the amount of the charge exceeds a threshold;a connection transistor configured to connect the charge accumulationunit and the detection unit and allow the photocurrent to flow; and adigital signal processing unit configured to process a digital signalobtained by performing analog-digital conversion for an analog signalaccording to the voltage.
 17. A method of controlling a solid-stateimage sensor, the method comprising: generating, by a photoelectricconversion element, a charge by photoelectric conversion; accumulating,by a charge accumulation unit, the charge; generating, by the chargeaccumulation unit, a voltage according to an amount of the charge;detecting, by a detection unit, whether or not a change amount of aphotocurrent according to the amount of the charge exceeds apredetermined threshold; connecting, by a connection transistor, thecharge accumulation unit and the detection unit; and allowing, by theconnection transistor, the photocurrent to flow.
 18. The solid-stateimage sensor according to claim 2, further comprising: an amplificationtransistor coupled to the charge accumulation unit, wherein theamplification transistor is configured to: amplify the voltage generatedin the charge accumulation unit; and output an analog pixel signal, aselection transistor coupled to the amplification transistor, whereinthe selection transistor is configured to supply the analog pixel signalselectively to a vertical signal line, and an analog-digital converterconfigured to convert the analog pixel signal into a digital pixelsignal.